Table 1
Summary of III-V semiconductor mode-locked OFC sources with high comb spacing
| Operation principle | Configuration | Optical linewdith | Comb spacing | Bandwidth | Ref. |
| Passive Mode-locking | InGaAsP MQW with extended Si cavity | 400 kHz | 100 Mhz –1 GHz | 12 nm (10 dB) | [73] |
| Passive Mode-locking | InP/InAlGaAs MQW with extended SiN cavity | 200 kHz | 755 MHz | 3.27 nm (10 dB) | [74] |
| Passive Mode-locking | InAs/GaAs QD on SOI with external cavity | N/A | 102 GHz | 6.5 nm (3 dB) | [75] |
| Passive Mode-locking | 5th-order InAs chirped QD CPML on Si | N/A | 100 GHz | N/A | [76] |
| Passive Mode-locking | Two-section InAs QD MLL | N/A | 25.5 GHz | 4.7 nm (6 dB) | [77] |
| Passive Mode-locking | Two-section InAs QD MLL | N/A | 94 GHz | 3.18 nm (3 dB) | [78] |
| Passive Mode-locking | 4th-order InAs/GaAs QD CPML | 440 kHz | 100 GHz | 11.5 nm (3 dB) | [79] |
| Mono-wavelength Self-injection Locking | III-V DFB laser/SiN ring resonator | 1.2 Hz | 30 GHz | 4 nm (10 dB) | [80] |
| Mono-wavelength Self-injection Locking | III-V MQW FP laser/SiN ring resonator | 370 Hz | 12.5 GHz | N/A | [81] |
| Mono-wavelength Self-injection Locking | III-V MQW FP laser/SiN ring resonator | 186 kHz | 1.2 THz | N/A | [82] |
| Multi-wavelength Self-injection Locking | InAs QD FP laser on Si/external Lyot filter | 20 kHz | 30–700 GHz (Tunable) | 13 nm (10 dB) | [83] |
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