(A) Schematic of dual-gate h-BN encapsulated bilayer MoS₂ device. (B) PL spectrum of device D1 at F_z = −0.074 V/nm. Note that the range of 1.45–1.60 eV is magnified by 10 times for clarity. (C) Contour plot of the PL spectra of device D1 as a function of photon energy (bottom axis) and F_z (left axis). The doping density remains unchanged. (D) First-order energy derivative of (C). Real- and momentum-indirect excitons are labelled as RMX_1–3 in the sequence of decreasing emission energy. Gray (green) dashed lines in (C) and (D) represent linear-fits of RMX_1–3 (IX_1,2). The peak at around 1.99 eV that is insusceptible to F_z corresponds to the Raman G peak of graphene.