2T1C DRAM based on semiconducting MoS2 and semimetallic graphene for in-memory computing

Special Topic: Two-dimensional Materials and Devices

Open Access

Figure 2

Dynamic programming and erasing operation. Input signals of V_re and V_w in (A) programming and (B) erasing operations. Retention characteristics (C) V_c and (D) I_d over 9 s after programming/erasing operations. (E) Dynamic writing and reading by sequential programming and erasing pulses with 9 s interval.

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