Applications of 2D magnetic materials in spintronic devices. (A) Schematic of 2D magnetic tunnel junction based on bilayer CrI₃ functioning as the spin-filter sandwiched between graphene. Adapted with permission from [116]. Copyright©2018, American Association for the Advancement of Science. (B) A TMR ratio up to 19,000% based on tetralayer CrI₃ MTJ. Adapted with permission from [116]. Copyright©2018, American Association for the Advancement of Science. (C) Schematic tetralayer CrI₃ MTJ with gate-tunable TMR between 17,000% and 57,000%. Adapted with permission from [189]. Copyright©2019, American Chemical Society. (D) Fe₃GeTe₂/hBN/ Fe₃GeTe₂ MTJ with hBN serving as the tunneling barrier. Adapted with permission from [6]. Copyright©2018, American Chemical Society. (E) Spin-valve effect in Fe₃GeTe₂/hBN/Fe₃GeTe₂ MTJ with TMR of 160%. Adapted with permission from [6]. Copyright©2018, American Chemical Society. (F) Current vs. magnetic field curve of CrI₃ based MTJ with TMR up to 1,000,1000%. Adapted with permission from [186]. Copyright©2018, American Chemical Society. (G) Schematic of a CrI₃-based vdW heterostructures. Adapted with permission from [185]. Copyright©2018, American Association for the Advancement of Science. (H) Conductance through a tetralayer CrI₃ tunnel barrier as a function of an out-of-plane applied magnetic field. Adapted with permission from [185]. Copyright©2018, American Association for the Advancement of Science. (I) Schematic of graphene/CrI₃/graphene MTJ with electrically controllable conductance state based on the magnetic order in the CrI₃ tunnel barrier. Adapted with permission from [190]. Copyright©2019, Springer Nature.