Iodine-assisted ultrafast growth of high-quality monolayer MoS2 with sulfur-terminated edges

Special Topic: Two-dimensional Materials and Devices

Open Access

Figure 3

Electrical performance of the iodine-assisted CVD grown MoS₂. (A), (B) Typical transfer and output curves of the devices. The inset in (A) is a schematic of the back gate MoS₂ FET. (C) Transfer curves of six more MoS₂ FETs. (D) Comparisons of the mobility and on/off ratios of MoS₂.

Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.

Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.

Initial download of the metrics may take a while.