Challenges for future development of 2D-TMDCs-based logic circuits. (A) Pseudo-color dark field transmission electron microscopy image of MoS₂. Reproduced with permission from [56]. Copyright©2019, Springer Nature. (B) High-angle annular dark field image of MoS₂ clearly shows different sulfur vacancy types. Reproduced with permission from [59]. Copyright©2017, Springer Nature. (C) Multilayer 2D MoS₂ films obtained by layer-by-layer transfer. Reproduced with permission from [71]. Copyright©2017, Springer Nature. (D) Schematic diagram of Fermi pinning formed by metal and 2D MoS₂. Reproduced with permission from [65]. Copyright©2017, American Chemical Society. (E) Contact resistance versus carrier density of 2D MoS₂ transistors, with semi-metallic Sb achieving ultra-low contact resistance. Reproduced with permission from [81]. Copyright©2022, Springer Nature. (F) EOT versus subthreshold slope (SS) for different dielectric layers. Reproduced with permission from [89]. Copyright©2022, Springer Nature. (G) Switching ratio variation of several hundred MoS₂ transistors. Reproduced with permission from [90]. Copyright©2020, Springer Nature. (H) Yield of integrated WS₂ transistors. Reproduced with permission from [93]. Copyright©2022, Springer Nature. (I) Diagram of a high-resolution non-destructive 3D imaging device. Reproduced with permission from [96]. Copyright©2017, Springer Nature.