Natl Sci Open
Volume 2, Number 4, 2023
Special Topic: Two-dimensional Materials and Devices
|Number of page(s)||17|
|Published online||03 July 2023|
Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review
Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
2 Beijing Graphene Institute (BGI), Beijing 100095, China
3 Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
4 Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
5 Institute for Functional Intelligent Materials, National University of Singapore, Singapore 117575, Singapore
6 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
7 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
8 Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
9 Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
Revised: 23 February 2023
Accepted: 10 March 2023
Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal quality and device performance. Two-dimensional (2D) material-assisted heteroepitaxy offers an effective solution to these challenges. The weak interaction at the interface between films and substrates facilitates the subsequent exfoliation and transfer of epilayer for the fabrication of flexible or high-power electronics. Herein, we summarize the modes of 2D material-assisted epitaxy, which can be classified into remote epitaxy, pinhole epitaxy and van der Waals epitaxy based on the interfacial interaction between the epilayers and substrates. Furthermore, we discuss in detail the improved crystal quality and functional applications, such as flexible devices, wavelength-modulated optoelectronic devices, and thermal management in high-power devices. Moreover, we highlight the challenges and prospects of 2D material-assisted epitaxy, providing roadmaps for lateral research and semiconductor production.
Key words: graphene / 2D materials / heteroepitaxy / remote epitaxy / pinhole epitaxy / van der Waals epitaxy
© The Author(s) 2023. Published by China Science Publishing & Media Ltd. and EDP Sciences.
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