The structure of the field-effect device built based on antiparallel stacking of twisted double bilayer WSe₂ and the typical resistance hysteresis measured in the device. The device is double gated by the top and bottom gates in order to tune the carrier concentration and the displacement field (D). By fixing the top gate (V_TG) at −13.8 V, scanning the bottom gate (V_BG) results in the change of the filling states. Forward-backward scans (indicated by the dashed/solid lines) of V_BG show a clear resistance hysteresis.