(A) Measured rocking curves for the Si/Si_0.7Ge_0.3 stacked layers on Si substrates on the (004) surface. (B) Raman spectra deconvolution by Lorentz fitting at different process steps with substrate Si peak located at 520.2 cm⁻¹. (C) The measured and simulated σ_XX+σ_YY stress evolution comparison along the fabrication process. The inset was the simulated stress components of σ_XX and σ_YY along X and Y directions. (D) σ_XX and σ_YY distribution in channel and pad regions. The section was along and perpendicular to the channel direction.