Table 3
The material, preparation method, device size, highlights, open circuit voltage and photoelectric conversion efficiency (PCE) of solar cells reported in the literatures
Material | Preparation method | Device size | Highlight | Open circuit voltage | PCE | Year | Ref. |
CsSnI3 | Two step spin coating method | 0.08 cm2 | PTM regulate local electron density | 0.64 V | 10.1% | 2021 | [158] |
CH3NH3I/PbI2 | Spin-coating method | 10.4 mm2 | Perovskite/silicon stack | 1.78 V | 21.0% | 2021 | [172] |
Poly-SiOx | CVD | 0.135 cm2 | Perovskite/silicon stack | 1.894 V | 25.12% | 2021 | [173] |
Crystalline silicon | Ion beam bombardment | 4 inches | 3D nano/micro hybrid structures | 587.5 mV | 24% | 2022 | [157] |
Nanocrystalline silicon | CVD and Plasma deposition | ‒ | Silicon heterojunction technology | 0.76 V | 26.6% | 2024 | [156] |
Asymmetric non-fullerene acceptor | Spin-coating method | 3.159 mm2 | Asymmetric non-fullerene acceptors | 0.92 V | 20.2% | 2024 | [159] |
Cs0.05MA0.05FA0.90PbI3 | Spin-coating method and CVD | 27.22 cm2 | Doping-additive synergistic enhancement strategy | 1.17 V | 23.3% | 2024 | [160] |
MAPbI3 | Solution deposition | ‒ | Ultrafast hole transport | 1.355 V | 27.3% | 2024 | [161] |
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