Table 3

The material, preparation method, device size, highlights, open circuit voltage and photoelectric conversion efficiency (PCE) of solar cells reported in the literatures

Material Preparation method Device size Highlight Open circuit voltage PCE Year Ref.
CsSnI3 Two step spin coating method 0.08 cm2 PTM regulate local electron density 0.64 V 10.1% 2021 [158]
CH3NH3I/PbI2 Spin-coating method 10.4 mm2 Perovskite/silicon stack 1.78 V 21.0% 2021 [172]
Poly-SiOx CVD 0.135 cm2 Perovskite/silicon stack 1.894 V 25.12% 2021 [173]
Crystalline silicon Ion beam bombardment 4 inches 3D nano/micro hybrid structures 587.5 mV 24% 2022 [157]
Nanocrystalline silicon CVD and Plasma deposition Silicon heterojunction technology 0.76 V 26.6% 2024 [156]
Asymmetric non-fullerene acceptor Spin-coating method 3.159 mm2 Asymmetric non-fullerene acceptors 0.92 V 20.2% 2024 [159]
Cs0.05MA0.05FA0.90PbI3 Spin-coating method and CVD 27.22 cm2 Doping-additive synergistic enhancement strategy 1.17 V 23.3% 2024 [160]
MAPbI3 Solution deposition Ultrafast hole transport 1.355 V 27.3% 2024 [161]

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