Achieving superior thermoelectric transport in bismuth antimony telluride thin films via orientation and microstructure regulation

Special Topic: Thermoelectric Materials and Devices

Open Access

Figure 2

The SEM image of the Bi_0.5Sb_1.5Te₃ thin film before and after annealing. (a) As-prepared Bi_0.5Sb_1.5Te₃ thin film without annealing; annealed Bi_0.5Sb_1.5Te₃ thin film at (b) 300°C, (c) 400°C, and (d) 450°C. (e) The XRD patterns of Bi_0.5Sb_1.5Te₃ thin film before and after annealing at 400°C.

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