Electrical properties of Au-doped MoS₂/MoTe₂ JFET with MoS₂ serves as channel material and MoTe₂ serves as gate materials. (a) Optical microscope image of the MoS₂/MoTe₂ JFET. (b) Output characteristic curves of the MoS₂/MoTe₂ JFET. The three working stages represent (i) linear region, (ii) pinch-off region, and (iii) saturation region. (c) Drain voltage dependent transfer characteristic curves. (d) Linear plot of the transfer characteristic curves. The pinch-off voltage V_P of the JFET is −0.10 V. (e) The SS extracted at different V_DS at room temperature. (f) The g_m as a function of gate voltage at the V_DS of 1 and 2 V. (g–i) Cross-sectional view of the depletion region of the JFET at three stages of (g) linear region, (h) pinch-off region, and (i) saturation region, corresponding to the output characteristics in (b). The d represents the distance between the edge of the Au and MoS₂ in the JFET.